Transistor component having a shielding structure

US8102012B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Dethard Peters · Edenkoben, DE
• Peter Friedrichs · Koblenzer Straße, DE
• Rudolf Elpelt · Erlangen, DE
• Larissa Wehrhahn-Kilian · Erlangen, DE
• Michael Treu · Villach, AT
• Roland Rupp · Achern, DE

Key dates

• Filing date: Apr 17, 2009
• Grant date: Jan 24, 2012
• Expiry date: Jan 28, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/343

Abstract

A transistor component having a shielding structure. One embodiment provides a source terminal, a drain terminal and control terminal. A source zone of a first conductivity type is connected to the source terminal. A drain zone of the first conductivity type is connected to the drain terminal. A drift zone is arranged between the source zone and the drain zone. A junction control structure is provided for controlling a junction zone in the drift zone between the drain zone and the source zone, at least including one control zone. A shielding structure is arranged in the drift zone between the junction control structure and the drain zone and at least includes a shielding zone of a second conductivity type being complementarily to the first conductivity type. The shielding zone is connected to a terminal for a shielding potential. The at least one control zone and the at least one shielding zone have different geometries or different orientations in a plain that is perpendicular to a current flow direction of the component.