Nonvolatile memory device containing carbon or nitrogen doped diode
US8102694B2 · kind B2 · utility
5Cited by
44References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 25, 2007 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | Jun 11, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/36
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device includes at least one nonvolatile memory cell which comprises a silicon, germanium or silicon-germanium diode which is doped with at least one of carbon or nitrogen in a concentration greater than an unavoidable impurity level concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.