Magnetic memory with a thermally assisted writing procedure
US8102701B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2010 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | Jun 11, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device of MRAM type with a thermally-assisted writing procedure, the magnetic memory device being formed from a plurality of memory cells, each memory cell comprising a magnetic tunnel junction, the magnetic tunnel junction comprising a magnetic storage layer in which data can be written in a writing process; a reference layer, having a magnetization being always substantially in the same direction at any time of the writing process; an insulating layer between the reference layer and the storage layer; wherein the magnetic tunnel junction further comprises a writing layer made of a ferrimagnetic 3d-4f amorphous alloy, and comprising a net magnetization containing a first magnetization contribution originating from the sub-lattice of 3d transition elements and a second magnetization contribution originating from the sub-lattice of 4f rare-earth elements. The magnetic memory device has a low power consumption.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.