Magnetic element with a fast spin transfer torque writing procedure
US8102703B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2009 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | Aug 18, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic tunnel junction, including a reference layer having a fixed magnetization direction, a first storage layer having a magnetization direction that is adjustable relative to the magnetization direction of the reference layer by passing a write current through said magnetic tunnel junction, and an insulating layer disposed between said reference layer and first storage layer; characterized in that the magnetic tunnel junction further comprises a polarizing device to polarize the spins of the write current oriented perpendicular with the magnetization direction of the reference layer; and wherein said first storage layer has a damping constant above 0.02. A magnetic memory device formed by assembling an array of the magnetic tunnel junction can be fabricated resulting in lower power consumption.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.