Patent · US Active

Method and apparatus for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacks

US8105445B2 · kind B2 · utility

2Cited by

42References

26Claims

0Family size

Assignees

International Business Machines Corporation · US
Qimonda AG · DE

Inventors

Ulrich Klostermann · Fontainebleau, FR
Wolfgang Raberg · Sauerlach, DE
Philip L. Trouilloud · Norwood, US

Key dates

Filing date	Aug 19, 2008
Grant date	Jan 31, 2012
Priority date	—
Expiry date	Mar 16, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T117/1016
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method (and structure) of thermally treating a magnetic layer of a wafer, includes annealing, for a predetermined short duration, a magnetic layer of a single wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.