Method and system for overlay correction during photolithography
US8105736B2 · kind B2 · utility
1Cited by
34References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 13, 2008 |
| Grant date | Jan 31, 2012 |
| Priority date | — |
| Expiry date | Nov 18, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70633
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of performing overlay error correction includes forming a photoresist layer over a substrate and exposing a first set of apertures to incident radiation. The method also includes determining an overlay error associated with the first set of apertures and determining an overlay correction as a function of the determined overlay error. The method further includes exposing a data area and a second set of apertures. The data area and the second set of apertures are exposed based, in part, on the determined overlay correction. Moreover, the method includes verifying the determined overlay correction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.