Semiconductor device with vertical transistor and method for fabricating the same
US8105902B2 · kind B2 · utility
9Cited by
0References
18Claims
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Key dates
| Filing date | Jun 27, 2009 |
| Grant date | Jan 31, 2012 |
| Priority date | — |
| Expiry date | Jan 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/63
Abstract
A semiconductor device with a vertical transistor includes a plurality of active pillars, a plurality of vertical gates surrounding sidewalls of the active pillars; a plurality of word lines having exposed sidewalls whose surfaces are higher than the active pillars and connecting the adjacent vertical gates together, and a plurality of spacers surrounding the exposed sidewalls of the word lines over the vertical gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.