Methods for forming a transistor and modulating channel stress

US8105908B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Sunderraj Thirupapuliyur · San Jose, US
• Faran Nouri · Los Altos, US
• Lori D. Washington · Union City, US

Key dates

• Filing date: Jun 23, 2005
• Grant date: Jan 31, 2012
• Expiry date: Apr 7, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

Methods are provided for manufacturing transistors and altering the stress in the channel region of a single transistor. One or more parameters that are effect stress in the channel region are altered for a single transistor to increase or decrease the channel stress in PMOS and NMOS transistors.