Localized alloying for improved bond reliability
US8105933B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2007 |
| Grant date | Jan 31, 2012 |
| Priority date | — |
| Expiry date | Nov 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In some embodiments a method of forming a gold-aluminum electrical interconnect is described. The method may include interposing a diffusion retardant layer between the gold and the aluminum (1002), the diffusion retardant layer including regions containing and regions substantially devoid of a diffusion retardant material; bringing into contact the diffusion retardant layer, the gold, and the aluminum (1004); forming alloys of gold and the diffusion retardant material in regions containing the material (1006) and forming gold-aluminum intermetallic compounds in regions substantially devoid of the material (1008); and forming a continuous electrically conducting path between the aluminum and the gold (1010). In some embodiments, a structure useful in a gold-aluminum interconnect is provided. The structure may include an aluminum alloy bond pad (530) and a diffusion retardant layer (520) in contact with the bond pad, the diffusion retardant layer including regions (522) containing and regions (524) substantially devoid of a diffusion retardant material. The structure may include a gold free air ball (714) in contact with the diffusion retardant layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.