Patent · US Active

Bump structure for a semiconductor device and method of manufacture

US8105934B2 · kind B2 · utility

14Cited by
10References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 12, 2009
Grant dateJan 31, 2012
Priority date
Expiry dateNov 15, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/14
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device employing the bump structure includes a plurality of bump structures arrayed along a substrate in a first direction. Each bump structure has a width in the first direction greater than a pitch gap between successively arrayed bump structures, and at least one bump structure has a sidewall facing in the first direction that is non-conductive.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.