Use of CMP to contact a MTJ structure without forming a via
US8105948B2 · kind B2 · utility
37Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2008 |
| Grant date | Jan 31, 2012 |
| Priority date | — |
| Expiry date | Nov 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process is described for making contact to the buried capping layers of GMR and MTJ devices without the need to form and fill via holes. CMP is applied to the structure in three steps: (1) conventional CMP (2) a Highly Selective Slurry (HSS) is substituted for the conventional slurry to just expose the capping layer, and (3) the HSS is diluted and used to clean the surface as well as to cause a slight protrusion of the capping layers above the surrounding dielectric surface, making it easier the contact them without damaging the devices below.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.