Inventor · Saratoga, CA, US

Tom Zhong

58Patents
16h-index
49Co-inventors
84Inventor score

Filing activity: Dec 29, 1998 → Jul 28, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US7045368B2 MRAM cell structure and method of fabrication Electricity 117 Expired
US7476919B2 MRAM cell structure and method of fabrication Electricity 98 Active
US7863060B2 Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devices Electricity 81 Active
US8722543B2 Composite hard mask with upper sacrificial dielectric layer for the patterning and etching of nanometer size MRAM devices Emerging Cross-Sectional Technologies 75 Active
US7936027B2 Method of MRAM fabrication with zero electrical shorting Electricity 74 Active
US8105948B2 Use of CMP to contact a MTJ structure without forming a via Electricity 37 Active
US8772051B1 Fabrication method for embedded magnetic memory Electricity 31 Active
US8324698B2 High density spin-transfer torque MRAM process Electricity 28 Active
US10069064B1 Memory structure having a magnetic tunnel junction (MTJ) self-aligned to a T-shaped bottom electrode, and method of manufacturing the same Electricity 26 Active
US7884433B2 High density spin-transfer torque MRAM process Electricity 22 Active
US6254936A Environment exchange control for material on a wafer surface Physics 22 Expired
US6327793A Method for two dimensional adaptive process control of critical dimensions during spin coating process Performing Operations; Transporting 21 Expired
US8183061B2 High density spin-transfer torque MRAM process Electricity 21 Active
US7122386B1 Method of fabricating contact pad for magnetic random access memory Electricity 19 Expired
US8133745B2 Method of magnetic tunneling layer processes for spin-transfer torque MRAM Electricity 19 Active
US6662466B2 Method for two dimensional adaptive process control of critical dimensions during spin coating process Performing Operations; Transporting 16 Expired
US6977098B2 Method of uniformly coating a substrate Performing Operations; Transporting 15 Expired
US6468586B1 Environment exchange control for material on a wafer surface Physics 14 Expired
US6780461B2 Environment exchange control for material on a wafer surface Physics 13 Expired
US8803293B2 Method to reduce magnetic film stress for better yield Electricity 12 Active
US8933542B2 Method to reduce magnetic film stress for better yield Electricity 12 Active
US9608200B2 Hybrid metallic hard mask stack for MTJ etching Electricity 10 Active
US9972777B1 MTJ device process/integration method with pre-patterned seed layer Electricity 7 Active
US7508700B2 Method of magnetic tunneling junction pattern layout for magnetic random access memory Emerging Cross-Sectional Technologies 7 Active
US6844027B1 Environment exchange control for material on a wafer surface Physics 7 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.