Method for manufacturing a resistor random access memory with a self-aligned air gap insulator
US8106376B2 · kind B2 · utility
16Cited by
6References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2007 |
| Grant date | Jan 31, 2012 |
| Priority date | — |
| Expiry date | Nov 28, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
A memory device including a programmable resistive memory material is described along with methods for manufacturing the memory device. A memory device disclosed herein includes top and bottom electrodes and a multilayer stack disposed between the top and bottom electrodes. The multilayer stack includes a memory element comprising programmable resistive memory material and has a sidewall surface. An air gap is adjacent to the sidewall surface and self-aligned to the memory element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.