Semiconductor structures with rare-earths
US8106381B2 · kind B2 · utility
24Cited by
27References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 16, 2007 |
| Grant date | Jan 31, 2012 |
| Priority date | — |
| Expiry date | Feb 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6741
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses structures to increase carrier mobility using engineered substrate technologies for a solid state device. Structures employing rare-earth compounds enable heteroepitaxy of different semiconductor materials of different orientations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.