Non-volatile memory with fast binary programming and reduced power consumption
US8107298B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2010 |
| Grant date | Jan 31, 2012 |
| Priority date | — |
| Expiry date | Sep 5, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5642
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a non-volatile storage system, the time needed to perform a programming operation is reduced by minimizing data transfers between sense modules and a managing circuit. A sense module is associated with each storage element. Based on write data, a data node in the sense module is initialized to “0” for a storage element which is to remain in an erased state, and to “1” for a storage element which is to be programmed to a programmed state, then flipped to “0” when programmed is completed. The managing circuit is relieved of the need to access the write data to determine whether a “0” represents a storage element for which programming is completed. Power consumption can also be reduced by keeping a bit line voltage high between a verify phase of one program-verify iteration and a program phase of a next program-verify iteration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.