Patent · US Active

Graded dielectric layers

US8110469B2 · kind B2 · utility

8Cited by

341References

31Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Dan Gealy · Kuna, US
Vishwanath Bhat · Boise, US
Cancheepuram V. Srividya · Boise, US
M. Noel Rocklein · Boulder, US

Key dates

Filing date	Aug 30, 2005
Grant date	Feb 7, 2012
Priority date	—
Expiry date	Mar 17, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/60
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.