Pulsed PECVD method for modulating hydrogen content in hard mask
US8110493B1 · kind B1 · utility
33Cited by
87References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 14, 2008 |
| Grant date | Feb 7, 2012 |
| Priority date | — |
| Expiry date | Mar 3, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0332
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a PECVD deposited amorphous carbon or ashable hard mask (AHM) in a trench or a via with less than 30% H content at a process temperature below 500° C., e.g., about 400° C. produces low H content hard masks with high selectivity and little or no hard mask on the sidewalls. The deposition method utilizes a pulsed precursor delivery with a plasma etch while the precursor flow is off.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.