Pramod Subramonium
34Patents
15h-index
59Co-inventors
80Inventor score
Filing activity: Dec 23, 2005 → Jul 13, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8956983B2 | Conformal doping via plasma activated atomic layer deposition and conformal film deposition | Electricity | 572 | Active |
| US7381644B1 | Pulsed PECVD method for modulating hydrogen content in hard mask | Emerging Cross-Sectional Technologies | 520 | Expired |
| US8591659B1 | Plasma clean method for deposition chamber | Electricity | 518 | Active |
| US9399228B2 | Method and apparatus for purging and plasma suppression in a process chamber | Emerging Cross-Sectional Technologies | 411 | Active |
| US8637411B2 | Plasma activated conformal dielectric film deposition | Electricity | 95 | Active |
| US8999859B2 | Plasma activated conformal dielectric film deposition | Electricity | 55 | Active |
| US7915166B1 | Diffusion barrier and etch stop films | Electricity | 53 | Active |
| US8435608B1 | Methods of depositing smooth and conformal ashable hard mask films | Electricity | 46 | Active |
| US7981810B1 | Methods of depositing highly selective transparent ashable hardmask films | Electricity | 40 | Active |
| US8110493B1 | Pulsed PECVD method for modulating hydrogen content in hard mask | Electricity | 33 | Active |
| US8669181B1 | Diffusion barrier and etch stop films | Electricity | 32 | Active |
| US7906817B1 | High compressive stress carbon liners for MOS devices | Electricity | 31 | Active |
| US9570274B2 | Plasma activated conformal dielectric film deposition | Electricity | 29 | Active |
| US7981777B1 | Methods of depositing stable and hermetic ashable hardmask films | Electricity | 28 | Active |
| US10043655B2 | Plasma activated conformal dielectric film deposition | Electricity | 23 | Active |
| US8741394B2 | In-situ deposition of film stacks | Electricity | 15 | Active |
| US8288292B2 | Depositing conformal boron nitride film by CVD without plasma | Electricity | 12 | Active |
| US9153482B2 | Methods and apparatus for selective deposition of cobalt in semiconductor processing | Electricity | 11 | Active |
| US9633896B1 | Methods for formation of low-k aluminum-containing etch stop films | Electricity | 10 | Active |
| US8268722B2 | Interfacial capping layers for interconnects | Electricity | 10 | Active |
| US8962101B2 | Methods and apparatus for plasma-based deposition | Electricity | 6 | Active |
| US9589799B2 | High selectivity and low stress carbon hardmask by pulsed low frequency RF power | Electricity | 6 | Active |
| US9028924B2 | In-situ deposition of film stacks | Electricity | 6 | Active |
| US9240320B1 | Methods of depositing smooth and conformal ashable hard mask films | Electricity | 5 | Active |
| US10214816B2 | PECVD apparatus for in-situ deposition of film stacks | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.