Semiconductor structure including trench capacitor and trench resistor
US8110862B2 · kind B2 · utility
36Cited by
12References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2009 |
| Grant date | Feb 7, 2012 |
| Priority date | — |
| Expiry date | Jul 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/85
Abstract
A structure and a method for fabrication of the structure use a capacitor trench for a trench capacitor and a resistor trench for a trench resistor. The structure is typically a semiconductor structure. In a first instance, the capacitor trench has a linewidth dimension narrower than the resistor trench. The trench linewidth difference provides an efficient method for fabricating the trench capacitor and the trench resistor. In a second instance, the trench resistor comprises a conductor material at a periphery of the resistor trench and a resistor material at a central portion of the resistor trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.