Patent · US Active

NAND step voltage switching method

US8111555B2 · kind B2 · utility

1Cited by

13References

17Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Akira Goda · Boise, US
Taehoon Kim · Hwaseong-si, KR
Doyle Rivers · Cameron Park, US
Roger Porter · Boise, US

Key dates

Filing date	Jan 29, 2010
Grant date	Feb 7, 2012
Priority date	—
Expiry date	Mar 15, 2030

Classification

Technology area (CPC G)Physics
CPC primaryG11C2211/5621
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Methods and memories having switching points for changing Vstep increments according to a level of a multilevel cell being programmed include programming at a smaller Vstep increment in narrow threshold voltage situations and programming at a larger Vstep increment where faster programming is desired.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.