Semiconductor single crystal growth method having improvement in oxygen concentration characteristics
US8114216B2 · kind B2 · utility
1Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2008 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | May 26, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B30/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a semiconductor single crystal growth method, which uses a Czochralski process for growing a semiconductor single crystal through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and pulling up the seed while rotating the quartz crucible and applying a strong horizontal magnetic field, wherein the seed is pulled up while the quartz crucible is rotated with a rate between 0.6 rpm and 1.5 rpm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.