Method of forming sub-lithographic features using directed self-assembly of polymers
US8114306B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2009 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Aug 5, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/947
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods involving the self-assembly of block copolymers are described herein, in which by beginning with openings (in one or more substrates) that have a targeted CD (critical dimension), holes are formed, in either regular arrays or arbitrary arrangements. Significantly, the percentage variation in the average diameter of the formed holes is less than the percentage variation of the average diameter of the initial openings. The formed holes (or vias) can be transferred into the underlying substrate(s), and these holes may then be backfilled with material, such as a metallic conductor. Preferred aspects of the invention enable the creation of vias with tighter pitch and better CD uniformity, even at sub-22 nm technology nodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.