Method for dielectric material removal between conductive lines
US8114780B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Mar 27, 2009 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Sep 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of removing carbon doped silicon oxide between metal contacts is provided. A layer of the carbon doped silicon oxide is converted to a layer of silicon oxide by removing the carbon dopant. The converted layer of silicon oxide is selectively wet etched with respect to the carbon doped silicon oxide and the metal contacts, which forms recess between the metal contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.