Plasma CVD method, silicon nitride film formation method, semiconductor device manufacturing method, and plasma CVD apparatus
US8114790B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2007 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Aug 25, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a process chamber configured to be vacuum-exhausted; a worktable configured to place a target substrate thereon inside the process chamber; a microwave generation source configured to generate microwaves; a planar antenna including a plurality of slots and configured to supply microwaves generated by the microwave generation source through the slots into the process chamber; a gas supply mechanism configured to supply a film formation source gas into the process chamber; and an RF power supply configured to apply an RF power to the worktable. The apparatus is preset to turn a nitrogen-containing gas and a silicon-containing gas supplied in the process chamber into plasma by the microwaves, and to deposit a silicon nitride film on a surface of the target substrate by use of the plasma, while applying the RF power to the worktable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.