Method of driving multi-level variable resistive memory device and multi-level variable resistive memory device
US8116117B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2009 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Dec 16, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of driving a multi-level variable resistive memory device. A method of driving a multi-level variable resistive memory device includes supplying a write current to a variable resistive memory cell so as to change resistance of the variable resistive memory cell, verifying whether or not changed resistance enters a predetermined resistance window, the intended resistance window depending on the resistance of reference cells, and supplying a write current having an increased or decreased amount from the write current supplied most recently on the basis of the verification result so as to change resistance of the variable resistive memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.