Patent · US Active

Memory cell provided with dual-gate transistors, with independent asymmetric gates

US8116118B2 · kind B2 · utility

10Cited by

22References

15Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Olivier Thomas · Saint-Martin-d'Hères, FR
Maud Vinet · Voiron, FR

Key dates

Filing date	Dec 26, 2007
Grant date	Feb 14, 2012
Priority date	—
Expiry date	Dec 26, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/62
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The invention concerns a random access memory cell comprising:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.