Using a bit specific reference level to read a resistive memory
US8116159B2 · kind B2 · utility
3Cited by
9References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2005 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Nov 18, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0054
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.