Formation of a silicon oxynitride layer on a high-k dielectric material
US8119210B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2004 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Nov 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method for depositing a capping layer on a dielectric layer in a process chamber is provided which includes depositing the dielectric layer on a substrate surface, depositing a silicon-containing layer by an ALD process, comprising alternately pulsing a silicon precursor and an oxidizing gas into the process chamber, and exposing the silicon-containing layer to a nitridation process. In another embodiment, a method for depositing a silicon-containing capping layer on a dielectric layer in a process chamber by an ALD process is provided which includes flowing a silicon precursor into the process chamber, purging the process chamber with a purge gas, flowing an oxidizing gas comprising water formed by flowing a H2 gas and an oxygen-containing gas through a water vapor generator, and purging the process chamber with the purge gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.