Depositing tungsten into high aspect ratio features
US8119527B1 · kind B1 · utility
416Cited by
16References
19Claims
0Family size
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Key dates
| Filing date | Aug 4, 2009 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Aug 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of filling high aspect ratio features provided on partially manufactured semiconductor substrates with tungsten-containing materials are provided. In certain embodiments, the methods include partial filling a high aspect ratio feature with a layer of tungsten-containing materials and selective removal of the partially filled materials from the feature cavity. Substrates processed using these methods have improved step coverage of the tungsten-containing materials filled into the high aspect ratio features and reduced seam sizes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.