Pattern forming method and semiconductor device manufacturing method
US8119530B2 · kind B2 · utility
181Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Dec 20, 2007 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Aug 15, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0245
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pattern forming method includes preparing a target object including silicon with an initial pattern formed thereon and having a first line width; performing a plasma oxidation process on the silicon surface inside a process chamber of a plasma processing apparatus and thereby forming a silicon oxide film on a surface of the initial pattern; and removing the silicon oxide film. The pattern forming method is arranged to repeatedly perform formation of the silicon oxide film and removal of the silicon oxide film so as to form an objective pattern having a second line width finer than the first line width on the target object.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.