Group III nitride white light emitting diode
US8120012B2 · kind B2 · utility
2Cited by
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13Claims
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Key dates
| Filing date | Sep 22, 2006 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Nov 3, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the quantum well structure, a first electrode formed on the p-type semiconductor, and a second electrode formed on at least a portion of the n-type semiconductor layer. Each quantum well structure includes an InxGa1-xN quantum well layer, an InyGa1-yN barrier layer (x>0.3 or x=0.3), and InzGa1-zN quantum dots, where x<y<z≦1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.