Magnetic tunnel junction device and fabrication
US8120126B2 · kind B2 · utility
15Cited by
7References
43Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2009 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Jul 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, the method includes depositing a capping material on a free layer of a magnetic tunneling junction structure to form the capping layer and oxidizing a portion of the capping material to form a layer of oxidized material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.