Low-cost non-volatile flash-RAM memory
US8120949B2 · kind B2 · utility
74Cited by
16References
19Claims
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Key dates
| Filing date | Jul 30, 2008 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Mar 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.