Oxidation method providing parallel gas flow over substrates in a semiconductor process
US8124181B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2007 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Dec 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxidation method includes supplying oxidizing and deoxidizing gases to a process field by spouting the gases in lateral directions respectively from first and second groups of gas spouting holes. Each group of holes is disposed adjacent to target substrates on one side of the process field and arrayed over a length corresponding to the process field in a vertical direction. Gases are exhausted through an exhaust port disposed opposite to the first and second groups of gas spouting holes with the process field interposed therebetween and present over a length corresponding to the process field in the vertical direction. This causes the gases to flow along the surfaces of the target substrates, thus forming gas flows parallel with the target substrates. The process field is heated by a heater disposed around the process container to generate oxygen radicals and hydroxyl group radicals within the process field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.