Tunneling magnetic sensing element including MGO film as insulating barrier layer
US8124253B2 · kind B2 · utility
2Cited by
2References
2Claims
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Key dates
| Filing date | Nov 10, 2009 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Jan 26, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A tunneling magnetic sensing element includes a laminate in which an underlayer, a seed layer, an antiferromagnetic layer, a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer are laminated in order from below. The insulating barrier layer is made of Mg—O. The underlayer is made of Ti, and the seed layer is made of one selected from a group consisting of Ni—Fe—Cr and Ru.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.