Semiconductor devices and methods of manufacture thereof

US8124483B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventor

• Thomas Schulz · Austin, US

Key dates

• Filing date: Jun 7, 2007
• Grant date: Feb 28, 2012
• Expiry date: Jan 11, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/024

Abstract

Semiconductor devices and methods of manufacture thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes forming a transistor, the transistor including a fin having a first side and a second side opposite the first side. The transistor includes a first gate electrode disposed on the first side of the fin and a second gate electrode disposed on the second side of the fin. The method includes forming a silicide or germanide of a metal on the first gate electrode and the second gate electrode of the transistor. The amount of the metal of the silicide or germanide is substantially homogeneous over the first gate electrode and the second gate electrode proximate the fin.