Method of forming self-aligned local interconnect and structure formed thereby
US8124525B1 · kind B1 · utility
8Cited by
8References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2010 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Oct 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide a method of forming local interconnect for semiconductor devices. The method includes depositing a blanket layer of conductive material over one or more semiconductor devices; creating a pattern of local interconnect covering a portion of the blanket layer of conductive material; removing rest of the blanket layer of conductive material that is not covered by the pattern of local interconnect; forming the local interconnect by the portion of the blanket layer of conductive material to connect the one or more semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.