Sensor device having a porous structure element

US8124953B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Klaus Elian · Alteglofsheim, DE
• Georg Meyer-Berg · Birkenfeld, DE
• Horst Theuss · Wenzenbach, DE

Key dates

• Filing date: Mar 12, 2009
• Grant date: Feb 28, 2012
• Expiry date: Jan 27, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/181
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A sensor device and method. One embodiment provides a first semiconductor chip having a sensing region. A porous structure element is attached to the first semiconductor chip. A first region of the porous structure element faces the sensing region of the first semiconductor chip. An encapsulation material partially encapsulates the first semiconductor chip and the porous structure element.