Conductive bridging random access memory device and method of manufacturing the same

US8124954B2 · kind B2 · utility

Assignee

• Industrial Technology Research Institute · TW

Inventors

• Ching-Chiun Wang · Gongguan, TW
• Cha-Hsin Lin · Tainan, TW

Key dates

• Filing date: May 27, 2009
• Grant date: Feb 28, 2012
• Expiry date: Mar 1, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A conductive bridging random access memory (CBRAM) device and a method of manufacturing the same are provided. The CBRAM device includes a first electrode layer, a dielectric layer, a solid electrolyte layer, a second electrode layer and a metal layer. The solid electrolyte layer is located on the first electrode layer. The second electrode layer is located on the solid electrolyte layer. The metal layer is located near the solid electrolyte layer. The dielectric layer is located between the solid electrolyte layer and the metal layer. Since the metal layer is disposed near the solid electrolyte layer in the CBRAM device, it can generate a positive electric field during an erase operation, so as to accelerate a break of mutually connected metal filaments.