White light devices using non-polar or semipolar gallium containing materials and phosphors
US8124996B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2009 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Sep 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/855
Abstract
A packaged light emitting device. The device includes a substrate member comprising a surface region and one or more light emitting diode devices overlying the surface region. In a specific embodiment, at least one of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The one or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission of one or more first wavelengths. At least at least one of the light emitting diode devices comprise a quantum well region, which is characterized by an electron wave function and a hole wave function. In a specific embodiment, the electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. In a specific embodiment, the device has a thickness of one or more entities formed overlying the one or more light emitting diode devices. The one or more entities are excited by the substantially polarized emission and emitting electromagnetic radiation of one or more second wavelengths.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.