Optical device structure using GaN substrates and growth structures for laser applications of emissions of 500 nm and greater
US8126024B1 · kind B1 · utility
187Cited by
1References
3Claims
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Key dates
| Filing date | Apr 16, 2010 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Sep 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical device having a structured active region configured for one or more selected wavelengths of light emissions of 500 nm and greater, but can be others.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.