Method of detecting defects in patterns on semiconductor substrate by comparing second image with reference image after acquiring second image from first image and apparatus for performing the same
US8126258B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2007 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Dec 28, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a method of detecting defects in patterns and an apparatus for performing the method, a first image of a detection region on a semiconductor substrate may be acquired. A second image may be acquired from the first image by performing a Fourier transform and performing a low pass filtering. The second image may be compared with a reference image so that the defects of the detection region are detected. Existence of the defect of the second image is determined using a relation value between a grey level of each of pixels of the second image and the reference image, respectively. When a defect exists, the horizontal and the vertical positions of the pixel where the relation value is minimum are combined to determine the position of the defect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.