Jong-An Kim
16Patents
5h-index
42Co-inventors
66Inventor score
Filing activity: Aug 14, 1998 → Dec 16, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6074974A | Manufacturing method of granulated complex molecular sieve composition having multi-functions | Performing Operations; Transporting | 33 | Expired |
| US7449352B2 | Mask and manufacturing method of a semiconductor device and a thin film transistor array panel using the mask | Electricity | 6 | Active |
| US8153339B2 | Mask and manufacturing method of a semiconductor device and a thin film transistor array panel using the mask | Electricity | 6 | Active |
| US7767506B2 | Mask and manufacturing method of a semiconductor device and a thin film transistor array panel using the mask | Electricity | 6 | Active |
| US8034640B2 | Apparatus and method to inspect defect of semiconductor device | Electricity | 5 | Active |
| US8126258B2 | Method of detecting defects in patterns on semiconductor substrate by comparing second image with reference image after acquiring second image from first image and apparatus for performing the same | Physics | 5 | Active |
| US8050488B2 | Method of analyzing a wafer sample | Physics | 3 | Active |
| US7804591B2 | Wafer inspecting method | Physics | 2 | Active |
| US7728966B2 | Optical inspection tool having lens unit with multiple beam paths for detecting surface defects of a substrate and methods of using same | Physics | 2 | Active |
| US8769292B2 | Method for generating standard file based on steganography technology and apparatus and method for validating integrity of metadata in the standard file | Physics | 1 | Active |
| US8055057B2 | Method for detecting defects in a substrate having a semiconductor device thereon | Physics | 1 | Active |
| US8055056B2 | Method of detecting defects of patterns on a semiconductor substrate and apparatus for performing the same | Physics | 1 | Active |
| US8546154B2 | Apparatus and method to inspect defect of semiconductor device | Electricity | 0 | Active |
| US11043814B2 | Apparatus for controlling ESS according to transient stability state and method thereof | Electricity | 0 | Active |
| US10989520B2 | Methods for nondestructive measurements of thickness of underlying layers | Physics | 0 | Active |
| US9045349B2 | Method for preparing porous alumina | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.