Plasma etching method and computer-readable storage medium
US8128831B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2006 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Dec 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a first and a second electrode disposed to face each other in a processing chamber, the second electrode supporting a substrate; a first RF power supply for applying a first RF power of a higher frequency to the second electrode; a second RF power supply for applying a second RF power of a lower frequency to the second electrode; and a DC power source for applying a DC voltage to the first electrode. In a plasma etching method for etching a substrate by using the plasma processing apparatus, the first and the second radio frequency power are applied to the second electrode to convert a processing gas containing no CF-based gas into a plasma and a DC voltage is applied to the first electrode, to thereby etch an organic film or an amorphous carbon film on the substrate by using a silicon-containing mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.