Apparatus and method for electroless deposition of materials on semiconductor substrates
US8128987B2 · kind B2 · utility
1Cited by
17References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 26, 2005 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Mar 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/288
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for electroless deposition from a deposition solution in a working chamber, where the process can include heating the deposition solution to its boiling point and subsequently reducing the temperature of the deposition solution to a working temperature range that is between approximately 1% and approximately 25% below the boiling point of said solution under a predetermined pressure; and the process also can include heating the deposition solution while filling an enclosed area of the chamber such that the deposition solution reaches its boiling point immediately after the enclosed area is filled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.