Method of improving mechanical properties of semiconductor interconnects with nanoparticles
US8129269B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2010 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Sep 20, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/96
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a BEOL process, UV radiation is used in a curing process of ultra low-k (ULK) dielectrics. This radiation penetrates through the ULK material and reaches the cap film underneath it. The interaction between the UV light and the film leads to a change the properties of the cap film. Of particular concern is the change in the stress state of the cap from compressive to tensile stress. This leads to a weaker dielectric-cap interface and mechanical failure of the ULK film. A layer of nanoparticles is inserted between the cap and the ULK film. The nanoparticles absorb the UV light before it can damage the cap film, thus maintaining the mechanical integrity of the ULK dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.