Substrate device having a tuned work function and methods of forming thereof
US8129280B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2009 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Nov 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Substrate devices having tuned work functions and methods of forming thereof are provided. In some embodiments, forming devices on substrates may include depositing a dielectric layer atop a substrate having a conductivity well; depositing a work function layer comprising titanium aluminum or titanium aluminum nitride having a first nitrogen composition atop the dielectric layer; etching the work function layer to selectively remove at least a portion of the work function layer from atop the dielectric layer; depositing a layer comprising titanium aluminum or titanium aluminum nitride having a second nitrogen composition atop the work function layer and the substrate, wherein at least one of the work function layer or the layer comprises nitrogen; etching the layer and the dielectric layer to selectively remove a portion of the layer and the dielectric layer from atop the substrate; and annealing the substrate at a temperature less than about 1500 degrees Celsius.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.