Plasma based photoresist removal system for cleaning post ash residue
US8129281B1 · kind B1 · utility
22Cited by
121References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 2005 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Jun 6, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/302
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of cleaning a low dielectric constant film in a lithographic process includes providing a dielectric film having thereover a resist composition, the dielectric film having a dielectric constant no greater than about 4.0, and stripping the resist composition to leave a substantially silicon-containing ash residue on the dielectric film. The method then includes contacting the ash residue with plasma comprising an ionized, essentially pure noble gas such as helium to remove the resist residue without substantially affecting the underlying dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.