Structures and methods of a bistable resistive random access memory
US8129706B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2006 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Jan 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
Structures and methods to form a bistable resistive random access memory for reducing the amount of heat dissipation from electrodes by confining a heating region in the memory cell device are described. The heating region is confined in a kernel comprising a programmable resistive memory material that is in contact with an upper programmable resistive memory member and a lower programmable resistive memory member. The lower programmable resistive member has sides that align with sides of a bottom electrode comprising a tungsten plug. The lower programmable resistive member and the bottom electrode function a first conductor so that the amount of heat dissipation from the first conductor is reduced. The upper programmable resistive memory material and a top electrode function as a second conductor so that the amount of heat dissipation from the second conductor is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.