Dry cleaning method for plasma processing apparatus
US8133325B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2008 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | May 28, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/905
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This dry cleaning method for a plasma processing apparatus is a dry cleaning method for a plasma processing apparatus that includes: a vacuum container provided with a dielectric member; a planar electrode and a high-frequency antenna that are provided outside the dielectric member; and a high-frequency power source that supplies high-frequency power to both the high-frequency antenna and the planar electrode, to thereby introduce high-frequency power into the vacuum container via the dielectric member and produce an inductively-coupled plasma, the method comprising the steps of: introducing a gas including fluorine into the vacuum container and also introducing high-frequency power into the vacuum container from the high-frequency power source, to thereby produce an inductively-coupled plasma in the gas including fluorine; and by use of the inductively-coupled plasma, removing a product including at least one of a precious metal and a ferroelectric that is adhered to the dielectric member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.